• DocumentCode
    2304708
  • Title

    Dilute-As GaNAs semiconductor for visible emitters

  • Author

    Tan, Chee-Keong ; Zhang, Jing ; Li, Xiao-Hang ; Liu, Guangyu ; Tansu, Nelson

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    695
  • Lastpage
    696
  • Abstract
    First-principle analysis of the band structure for dilute-As GaN1-xAsx semiconductor was carried out, and the finding showed the direct bandgap properties of this alloy covering the entire visible spectral regime applicable for new visible emitters.
  • Keywords
    III-V semiconductors; ab initio calculations; arsenic compounds; energy gap; gallium compounds; optical materials; wide band gap semiconductors; AsGaN1-xAsx; band structure; dilute semiconductor; direct bandgap properties; first principle analysis; visible emitters; visible spectral regime; Discrete Fourier transforms; Effective mass; Gallium nitride; Light emitting diodes; Materials; Metals; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358812
  • Filename
    6358812
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2304708