• DocumentCode
    230483
  • Title

    Ultra-low voltage (0.1V) operation of Vth self-adjusting MOSFET and SRAM cell

  • Author

    Ueda, Akitsugu ; Seung-Min Jung ; Mizutani, Tomoko ; Kumar, Ajit ; Saraya, Takuya ; Hiramoto, Toshiro

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2014
  • fDate
    9-12 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A Vth self-adjusting MOSFET consisting of floating gate is proposed and the ultra-low voltage operation of the Vth self-adjustment and SRAM cell at as low as 0.1V is successfully demonstrated. In this device, Vth automatically decreases at on-state and increases at off-state, resulting in high Ion/Ioff ratio as well as stable SRAM operation at low Vdd. The minimum operation voltage at 0.1V is experimentally demonstrated in 6T SRAM cell with Vth self-adjusting nFETs and pFETs.
  • Keywords
    MOSFET; SRAM chips; low-power electronics; SRAM cell; floating gate; minimum operation voltage; self-adjusting MOSFET; self-adjusting nFETs; self-adjusting pFETs; ultra-low voltage operation; voltage 0.1 V; Circuit stability; MOSFET; SRAM cells; Very large scale integration; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4799-3331-0
  • Type

    conf

  • DOI
    10.1109/VLSIT.2014.6894416
  • Filename
    6894416
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=230483