Systematic study of RTN in nanowire transistor and enhanced RTN by hot carrier injection and negative bias temperature instability

We experimentally study the random telegraph noise (RTN) in nanowire transistor (NW Tr.) with various widths (W), lengths (L), and heights (H). Time components of RTN such as time to capture (τ_c) and emission (τ_e) are independent of NW size, while threshold voltage fluctuation (ΔV_th) by RTN can be well fitted with 1/{L(W+2H)}^0.5 corresponding to the conventional carrier number fluctuations regardless of the side surface orientation. Hot carrier injection (HCI) and negative bias temperature instability (NBTI) induced additional carrier traps leading to the increase in the number of observed RTN. Moreover, ΔV_th is enhanced by HCI and NBTI and enhancement of ΔV_th becomes larger in narrower W.