DocumentCode :
2305015
Title :
Room temperature CW defect cavity photonic crystal membrane lasers metal bonded to substrate
Author :
Sulkin, Joshua D. ; Giannopoulos, Antonios V. ; Choquette, Kent D.
Author_Institution :
Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
498
Lastpage :
499
Abstract :
Recent work has clearly demonstrated that bonding a photonic crystal (PhC) membrane on to a low-index substrate such as sapphire is a viable means to make lasers that operate continuous wave (CW) at room temperature. Though the substrate (which has a refractive index larger than that of air) reduces the quality (Q) factor, as compared to a suspended membrane, it also greatly increases the thermal conductivity, thereby reducing the temperature of the active medium . Many different bonding techniques have been used, including direct semiconductor-to-dielectric bonding , BCB bonding, and Au/In bonding. This paper demonstrates a simple metal-metal Van-der-Waals bonding method to bond an InGaAsP membrane active layer to a carrier substrate to produce a CW, room temperature, photo-pumped PhC laser. While previous reports have demonstrated graphite band-edge PhC lasers with a metal backing, defect cavity PhC lasers with a buried metal layer is reported.
Keywords :
III-V semiconductors; Q-factor; gallium arsenide; indium compounds; photonic crystals; refractive index; semiconductor lasers; CW defect cavity photonic crystal membrane lasers; SiO2-Al2O3-InGaAsP-InP-Ti-Ag-Au; continuous wave operation; metal-metal Van der Waals bonding; photopumped laser; quality factor; refractive index; room temperature photonic crystal membrane lasers; temperature 293 K to 298 K; thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5698979
Filename :
5698979
Link To Document :
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