High-Q inductors on locally semi-insulated Si substrate by helium-3 bombardment for RF CMOS integrated circuits

Author

Ning Li ; Okada, Kenichi ; Inoue, Takeru ; Hirano, Takuichi ; Qinghong Bu ; Narayanan, Aravind Tharayil ; Siriburanon, Teerachot ; Sakane, Hiroki ; Matsuzawa, Akira

Author_Institution

Tokyo Inst. of Technol., Tokyo, Japan

fYear

2014

fDate

9-12 June 2014

Firstpage

1

Lastpage

2

Abstract

A novel helium-3 ion bombardment technique is proposed for creating locally semi-insulating substrate areas. A helium-3 dose of only 1.5×10¹³cm^-2 increases a Si substrate resistivity from 6Ω-cm to 1.5kΩ-cm, which improves the quality factor of a 2-nH inductor with a 140μm-diameter by 38% (Q=16.3). An aluminum mask is used for covering active areas, and at most 15-μm distance from the mask edge is required to avoid the p-n junction leakage. The proposed technique is applied to an 8-GHz oscillator, and an 8.5-dB improvement in the measured phase noise has been achieved.

Keywords

CMOS integrated circuits; Q-factor; elemental semiconductors; integrated circuit interconnections; masks; oscillators; p-n junctions; radiofrequency integrated circuits; silicon; RF CMOS integrated circuits; Si; aluminum mask; distance 15 mum; frequency 8 GHz; helium-3 ion bombardment technique; high-Q inductors; mask edge; oscillator; p-n junction leakage; phase noise; quality factor; semi-insulated substrate; size 140 mum; Conductivity; Inductors; Phase noise; Protons; Silicon; Substrates; Transistors; CMOS; Helium-3 Bombardment; Inductor;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4799-3331-0

Type

conf

DOI

10.1109/VLSIT.2014.6894430

Filename

6894430