Title :
Individually-addressed planar nanoscale InGaN-based light emitters
Author :
Massoubre, D. ; Edwards, P.R. ; Xie, E. ; Richardson, E. ; Watson, I.M. ; Gu, E. ; Martin, R.W. ; Dawson, M.D.
Author_Institution :
Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
Abstract :
We report on a new fabrication approach to create individually-addressable InGaN-based nanoscale-LEDs. It is based on the creation by LEEBI of a spatially confined sub-micron-size charge injection path within the p-GaN of an LED structure.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; nanophotonics; InGaN; LED; LEEBI; charge injection path; light emitting diodes; planar nanoscale light emitters; Apertures; Electron beams; Fabrication; Gallium nitride; Light emitting diodes; Nanoscale devices; Standards;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358842
