• DocumentCode
    230525
  • Title

    1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice films

  • Author

    Tai, M. ; Ohyanagi, T. ; Kinoshita, Moto ; Morikawa, T. ; Akita, K. ; Kato, Shigeo ; Shirakawa, H. ; Araidai, M. ; Shiraishi, Kotaro ; Takaura, N.

  • Author_Institution
    Low-power Electron. Assoc. & Project, Tsukuba, Japan
  • fYear
    2014
  • fDate
    9-12 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A 1T-1R pillar-type “topological-switching RAM” (TRAM) and the data retention of GeTe/Sb2Te3 super-lattice were investigated. Reset voltage of TRAM, 2 V, was 40 % of that of the conventional PCM with Ge2Sb2Te5. From data retention evaluation, the TRAM was found to endure the retention at 260 °C for 18 hours.
  • Keywords
    antimony compounds; germanium compounds; phase change materials; random-access storage; thin films; 1T-1R pillar-type topological-switching random access memory; Ge2Sb2Te5; GeTe-Sb2Te3; TRAM; conventional PCM; data retention evaluation; super-lattice films; temperature 260 degC; time 18 hour; voltage 2 V; Cleaning; Films; Phase change materials; Random access memory; Resistance; Resistors; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4799-3331-0
  • Type

    conf

  • DOI
    10.1109/VLSIT.2014.6894436
  • Filename
    6894436
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=230525