• DocumentCode
    2305267
  • Title

    The infrared retina: Moving towards the fourth generation infrared detectors with quantum dots and superlattices

  • Author

    Krishna, Sanjay

  • Author_Institution
    ECE Dept., Univ. of New Mexico, Albuquerque, NM, USA
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    527
  • Lastpage
    527
  • Abstract
    This paper discusses the fourth generation of infrared detectors. Using the concept of a bio-inspired infrared retina, the author presents a case for an enhanced functionality in the pixel. The key idea is to engineer the pixel such that it not only has the ability to sense multimodal data such as color, polarization, dynamic range and phase but also the intelligence to transmit a reduced data set to the central processing unit. To highlight this approach , two material systems which are emerging as promising infrared detector technologies are used. These are (i) InAs/lnGaAs self assembled quantum dots in well (DWELL) hetereostructure and (ii) lnAs/(ln,Ga)Sb strain layer superlattices (SLS) detectors. Various approaches for realizing the infrared retina are discussed.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; self-assembly; semiconductor quantum dots; semiconductor superlattices; DWELL hetereostructure; InAs-InGaAs; InAs-InGaSb; central processing unit; fourth generation infrared detectors; infrared retina; reduced data transmission; self assembled quantum dots; strain layer superlattices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5698993
  • Filename
    5698993