DocumentCode
2305267
Title
The infrared retina: Moving towards the fourth generation infrared detectors with quantum dots and superlattices
Author
Krishna, Sanjay
Author_Institution
ECE Dept., Univ. of New Mexico, Albuquerque, NM, USA
fYear
2010
fDate
7-11 Nov. 2010
Firstpage
527
Lastpage
527
Abstract
This paper discusses the fourth generation of infrared detectors. Using the concept of a bio-inspired infrared retina, the author presents a case for an enhanced functionality in the pixel. The key idea is to engineer the pixel such that it not only has the ability to sense multimodal data such as color, polarization, dynamic range and phase but also the intelligence to transmit a reduced data set to the central processing unit. To highlight this approach , two material systems which are emerging as promising infrared detector technologies are used. These are (i) InAs/lnGaAs self assembled quantum dots in well (DWELL) hetereostructure and (ii) lnAs/(ln,Ga)Sb strain layer superlattices (SLS) detectors. Various approaches for realizing the infrared retina are discussed.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; self-assembly; semiconductor quantum dots; semiconductor superlattices; DWELL hetereostructure; InAs-InGaAs; InAs-InGaSb; central processing unit; fourth generation infrared detectors; infrared retina; reduced data transmission; self assembled quantum dots; strain layer superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location
Denver, CO
ISSN
-
Print_ISBN
978-1-4244-5368-9
Electronic_ISBN
-
Type
conf
DOI
10.1109/PHOTONICS.2010.5698993
Filename
5698993
Link To Document