Title :
A fast and low-voltage Cu complementary-atom-switch 1Mb array with high-temperature retention
Author :
Banno, N. ; Tada, Mitsunori ; Sakamoto, Takanori ; Miyamura, Makoto ; Okamoto, K. ; Iguchi, Noriyuki ; Nohisa, T. ; Hada, Hiromitsu
Author_Institution :
Low-power Electron. Ass°Ciation & Project (LEAP), Tsukuba, Japan
Abstract :
Fast (10ns) and low voltage (2V) programming of Cu atom switch has been demonstrated in a 1Mb switch array for the first time. A newly developed redox-control buffer of Al0.5Ti0.5Ox leads to extremely steep slope switching of voltage dependent time-to-ON-state (56mV/decade), by eliminating metallic Al residues at the Cu surface. The programmed ON-state shows long lifetimes both under data-retention test at 260°C and DC stress test (Imax=140μA) at 125°C. A redox-control technology is indispensable for conducting bridges used in a low-power, nonvolatile programmable logic (NPL).
Keywords :
aluminium alloys; buffer storage; copper; integrated circuit testing; programmable logic devices; titanium alloys; Al0.5Ti0.5Ox; Cu; DC stress test; NPL; complementary-atom-switch array; current 140 muA; data-retention test; high-temperature retention; low voltage programming; nonvolatile programmable logic; redox-control buffer; slope switching; temperature 125 degC; temperature 260 degC; time 10 ns; time-to-on-state; voltage 2 V; Arrays; Metals; Optical switches; Programming; Resistance; Stress; Atom switch; BEOL device; Nonvolatile programmable logic;
Conference_Titel :
VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4799-3331-0
DOI :
10.1109/VLSIT.2014.6894437
