Title :
Site-controlled, high density InAs quantum dots by nanoscale selective area epitaxy
Author :
Dias, N.L. ; Garg, A. ; Young, J.D. ; Reddy, U. ; Coleman, J.J.
Author_Institution :
Univ. of Illinois, Urbana, IL, USA
Abstract :
High density, ordered arrays of InAs quantum dots by electron beam lithography and selective area epitaxy emitting in the 1.1μm range are demonstrated. The role of mask geometry on quantum dot nucleation is determined.
Keywords :
MOCVD; electron beam lithography; indium compounds; nucleation; semiconductor quantum dots; InAs; electron beam lithography; mask geometry; nanoscale selective area epitaxy; quantum dot nucleation; site-controlled high density quantum dots;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698994
