• DocumentCode
    2305311
  • Title

    Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes

  • Author

    Zhao, Hongping ; Zhang, Jing ; Toma, Takahiro ; Liu, Guangyu ; Poplawsky, Jonathan D. ; Dierolf, Volkmar ; Tansu, Nelson

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    532
  • Lastpage
    533
  • Abstract
    Growths of linearly-graded staggered InGaN quantum wells light-emitting diodes are performed, and the use of this novel active region leads to 2.5-3.5 times increase in output power.
  • Keywords
    III-V semiconductors; cathodoluminescence; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; InGaN; cathodoluminescence; light emitting diodes; linearly-shaped staggered quantum wells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5698996
  • Filename
    5698996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2305311