Title :
Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes
Author :
Zhao, Hongping ; Zhang, Jing ; Toma, Takahiro ; Liu, Guangyu ; Poplawsky, Jonathan D. ; Dierolf, Volkmar ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Growths of linearly-graded staggered InGaN quantum wells light-emitting diodes are performed, and the use of this novel active region leads to 2.5-3.5 times increase in output power.
Keywords :
III-V semiconductors; cathodoluminescence; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; InGaN; cathodoluminescence; light emitting diodes; linearly-shaped staggered quantum wells;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5698996
