DocumentCode
2305482
Title
Room temperature gate-controlled electron spin relaxation time in (110) GaAs/AlGaAs quantum wells
Author
Iba, Satoshi ; Koh, Shinji ; Kawaguchi, Hitoshi
Author_Institution
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan
fYear
2010
fDate
7-11 Nov. 2010
Firstpage
547
Lastpage
548
Abstract
We have successfully fabricated a high-quality (110) p-i-n structure with GaAs/AlGaAs quantum wells (QWs) and demonstrated a tenfold modulation of electron spin relaxation time in the QWs by applying an electric field at room temperature.
Keywords
III-V semiconductors; aluminium compounds; electron spin-lattice relaxation; gallium arsenide; quantum confined Stark effect; semiconductor quantum wells; GaAs-AlGaAs; electric field; electron spin relaxation time; gate control; p-i-n structure; quantum wells; room temperature; temperature 293 K to 298 K;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location
Denver, CO
ISSN
-
Print_ISBN
978-1-4244-5368-9
Electronic_ISBN
-
Type
conf
DOI
10.1109/PHOTONICS.2010.5699004
Filename
5699004
Link To Document