Polarization insensitive SOAs in AlInGaAs at 1550 nm

Author

Koonath, Prakash ; Kim, Sangin ; Cho, Woon-Jo ; Gopinath, Anand

Author_Institution

Electr. Comput. Eng. Dept., Minnesota Univ., Minneapolis, MN, USA

fYear

2002

fDate

17-22 Mar 2002

Firstpage

598

Lastpage

599

Abstract

Numerical calculations have been performed for polarization insensitive amplifiers in AlInGaAs material system for the 1550 nm wavelength window. SOAs fabricated and tested at 1527 nm show a maximum gain difference of 0.9 dB at 60 mA of drive current between the TE and the TM modes. A polarization insensitive spectral bandwidth of 40 nm was observed where the gain difference between the two polarizations was found to be less than 1 dB.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; light polarisation; optical testing; optical transmitters; semiconductor device testing; semiconductor optical amplifiers; 1527 nm; 1550 nm; 1550 nm wavelength window; 60 mA; AlInGaAs; AlInGaAs material system; MQW lasers; TE modes; TM modes; gain difference; maximum gain difference; numerical calculations; polarization insensitive amplifiers; polarization insensitive spectral bandwidth; Bit error rate; Optical amplifiers; Optical interferometry; Optical polarization; Optical sensors; Optical wavelength conversion; Optimized production technology; Semiconductor optical amplifiers; Stimulated emission; Transfer functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002

Print_ISBN

1-55752-701-6

Type

conf

DOI

10.1109/OFC.2002.1036587

Filename

1036587