Title :
Polarization insensitive SOAs in AlInGaAs at 1550 nm
Author :
Koonath, Prakash ; Kim, Sangin ; Cho, Woon-Jo ; Gopinath, Anand
Author_Institution :
Electr. Comput. Eng. Dept., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Numerical calculations have been performed for polarization insensitive amplifiers in AlInGaAs material system for the 1550 nm wavelength window. SOAs fabricated and tested at 1527 nm show a maximum gain difference of 0.9 dB at 60 mA of drive current between the TE and the TM modes. A polarization insensitive spectral bandwidth of 40 nm was observed where the gain difference between the two polarizations was found to be less than 1 dB.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; light polarisation; optical testing; optical transmitters; semiconductor device testing; semiconductor optical amplifiers; 1527 nm; 1550 nm; 1550 nm wavelength window; 60 mA; AlInGaAs; AlInGaAs material system; MQW lasers; TE modes; TM modes; gain difference; maximum gain difference; numerical calculations; polarization insensitive amplifiers; polarization insensitive spectral bandwidth; Bit error rate; Optical amplifiers; Optical interferometry; Optical polarization; Optical sensors; Optical wavelength conversion; Optimized production technology; Semiconductor optical amplifiers; Stimulated emission; Transfer functions;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036587
