DocumentCode :
2305680
Title :
Electrophysical properties of Bi2Te2.85Se0.15 single crystals doped with copper
Author :
Svechnikova, T.E. ; Maksimova, N.M. ; Konstantinov, P.P.
Author_Institution :
A.A. Baikov Inst. of Metall., Acad. of Sci., Moscow, Russia
fYear :
1997
fDate :
26-29 Aug 1997
Firstpage :
109
Lastpage :
110
Abstract :
The influence of copper addition on thermoelectric and electrophysical properties of Bi2Te2.85Se0.15 solid solutions grown by the Czochralski technique is studied. The effective segregation coefficient of copper Keff=0.2 is determined. Doping with small quantities of copper (up to 0.05 at.% in charge) leads to enhancement of carrier mobility and thermoelectric figure of merit, Z=(3.1-3.4) 10-3 K-1 in the temperature range of 220-350 K. The single crystals with copper content up to 0.1 at.% in charge are found to retain stability of properties. Annealing at 280°C for 150 hours did not cause any significant change in the thermoelectric properties
Keywords :
annealing; bismuth compounds; carrier mobility; copper; crystal growth from melt; segregation; semiconductor materials; solid solutions; thermoelectricity; 220 to 350 K; Bi2Te2.85Se0.15:Cu; Czochralski technique; annealing; carrier mobility; copper addition; effective segregation coefficient; single crystals; solid solutions; thermoelectric figure of merit; Annealing; Bismuth; Copper; Crystals; Doping; Solids; Tellurium; Temperature distribution; Thermal stability; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
ISSN :
1094-2734
Print_ISBN :
0-7803-4057-4
Type :
conf
DOI :
10.1109/ICT.1997.666986
Filename :
666986
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2305680
بازگشت