CVD nanodiamond thin films as high yield photocathodes driven by UV laser pulses

We present here an UV (266nm) photoemission setup dedicated to measure properties of conductive materials under DC extraction field as photocathodes. We have successfully tested copper, as reference material, and silicon samples. It allowed us testing photoemission properties of thin CVD nanodiamond films on silicon substrates. We demonstrate a strong influence on silicon doping type on the photoemission yield, pointing out a clear influence of the nanodiamond-silicon interface in the photoemission process. Furthermore, the nanodiamond-silicon structure exhibit one order of magnitude higher photoemission current compared to copper test samples.