Photocathodes based on graphene nanoplatelet emitters on semi-insulating GaAs photoswitch

Author

Yilmazoglu, Oktay ; Al-Daffaie, Shihab ; Kuppers, F. ; Hartnagel, H.L. ; Neo, Yoichiro ; Mimura, Hidenori

Author_Institution

Tech. Univ. Darmstadt, Darmstadt, Germany

fYear

2014

fDate

6-10 July 2014

Firstpage

21

Lastpage

22

Abstract

A simple photocathode based on graphene nanoplatelets glued on semi-insulating (s.i.) GaAs was fabricated and used for field electron emission in a diode configuration. The graphene nanoplatelets act as field emitter array with low turn-on field. The photomodulation was achieved with a GaAs photoswitch in series to the bottom of the graphene nanoplatelet emitters. The position and power of the laser illumination (800 nm) was not critical for photomodulation.

Keywords

diodes; field emitter arrays; gallium arsenide; graphene; nanostructured materials; optical modulation; optical switches; photocathodes; semiconductor materials; GaAs; diode configuration; field electron emission; field emitter array; graphene nanoplatelet emitters; laser illumination; photocathodes; photomodulation; semiinsulating photoswitch; Cathodes; Gallium arsenide; Graphene; Indium phosphide; Indium tin oxide; Q measurement; field emitter; graphene; photocathode; semi-insulating GaAs;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894740

Filename

6894740