DocumentCode
230587
Title
Pulsed field emission imaging of double-gate metal nano-tip arrays: Impact of emission current and noble gas conditioning
Author
Kanungo, P. Das ; Helfenstein, Patrick ; Guzenko, V.A. ; Lee, Chi-Kwan ; Tsujino, Soichiro
Author_Institution
Lab. of Micro & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland
fYear
2014
fDate
6-10 July 2014
Firstpage
29
Lastpage
30
Abstract
We studied the field emission characteristics of stacked-double gate all metal nano-tip arrays for the un-collimated emission current ranging from a few μA to 0.4 mA. Conditioning a 4×104-tip device in low-pressure neon gas ambient and applying long switching pulses, up to ~80 μA field emission current with the transverse energy spread well below 1 eV was demonstrated.
Keywords
field emission; free electron lasers; double gate metal nanotip arrays; field emission current; noble gas conditioning; pulsed field emission imaging; stacked double gate; Electronic mail; Logic gates; RNA; THz vacuum amplifiers; double-gate field emitter arrays; field emission; free electron laser; metal nano-tip;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location
Engelberg
Print_ISBN
978-1-4799-5306-6
Type
conf
DOI
10.1109/IVNC.2014.6894744
Filename
6894744
Link To Document