Title :
RwoH integral package for MCM using the GE HDI process with a metal barrier
Author :
Burgess, James F. ; Neugebauer, Constantine A.
Author_Institution :
Corp. Res. & Dev., Gen. Electr. Co., Schenectady, NY, USA
Abstract :
A quasi-hermetic approach to packaging is discussed. A metal overlayer is used to seal the hybrid package. This package used the GE HDI (high density interconnect) overlay process with a metal barrier layer. Background experiments with pinhole filling metal layer selection, process development, and testing are discussed
Keywords :
circuit reliability; integrated circuit technology; integrated circuit testing; multichip modules; seals (stoppers); GE HDI process; MCM; RwoH integral package; high density interconnect; hybrid package sealing; metal barrier; metal overlayer; pinhole filling metal layer selection; process development; quasi-hermetic approach; testing; Ceramics; Conductors; Copper; Packaging; Plasma temperature; Seals; Sputter etching; Substrates; Testing; Thermal spraying;
Conference_Titel :
Electronic Components and Technology Conference, 1993. Proceedings., 43rd
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0794-1
DOI :
10.1109/ECTC.1993.346739
