RwoH integral package for MCM using the GE HDI process with a metal barrier

Author

Burgess, James F. ; Neugebauer, Constantine A.

Author_Institution

Corp. Res. & Dev., Gen. Electr. Co., Schenectady, NY, USA

fYear

1993

fDate

1-4 Jun 1993

Firstpage

948

Lastpage

950

Abstract

A quasi-hermetic approach to packaging is discussed. A metal overlayer is used to seal the hybrid package. This package used the GE HDI (high density interconnect) overlay process with a metal barrier layer. Background experiments with pinhole filling metal layer selection, process development, and testing are discussed

Keywords

circuit reliability; integrated circuit technology; integrated circuit testing; multichip modules; seals (stoppers); GE HDI process; MCM; RwoH integral package; high density interconnect; hybrid package sealing; metal barrier; metal overlayer; pinhole filling metal layer selection; process development; quasi-hermetic approach; testing; Ceramics; Conductors; Copper; Packaging; Plasma temperature; Seals; Sputter etching; Substrates; Testing; Thermal spraying;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1993. Proceedings., 43rd

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0794-1

Type

conf

DOI

10.1109/ECTC.1993.346739

Filename

346739

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2305927