System 901: low K, copper MCM-C packaging

Author

Donohue, P.C. ; Page, J.P. ; Thiele, E.S. ; Hu, Y.H. ; Saltzberg, M.A. ; Gallo, S.A.

Author_Institution

DuPont Electron., Wilmington, DE, USA

fYear

1993

fDate

1-4 Jun 1993

Firstpage

893

Lastpage

895

Abstract

To meet the packaging needs of today´s larger faster IC´s DuPont Electronics has developed system 901. It is based on a crystallizable cordierite dielectric for low K, high strength, silicon matched TCE, combined with high conductivity copper metallization. Processing is easily carried out either with copper electrodes in a H₂O/N ₂ atmosphere or with CuO electrodes in a burnout/reduction/sinter sequence. In both modes, circuits meet packaging performance requirements, especially distortion-free camber, without the need for constrained-sintering. The achievement of these properties has required an understanding of the origin of the forces affecting sintering, and the development of modifiers to control those forces

Keywords

copper; glass; metallisation; multichip modules; permittivity; sintering; thermal expansion; Cu; Cu electrodes; CuO; CuO electrodes; DuPont Electronics; H₂O-N₂; H₂O/N₂ atmosphere; MCM-C packaging; Si matched TCE; burnout/reduction/sinter sequence; crystallizable cordierite dielectric; high conductivity Cu metallization; system 901; Atmosphere; Circuits; Conductivity; Copper; Crystallization; Dielectrics; Electrodes; Electronics packaging; Metallization; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference, 1993. Proceedings., 43rd

Conference_Location

Orlando, FL

Print_ISBN

0-7803-0794-1

Type

conf

DOI

10.1109/ECTC.1993.346746

Filename

346746