Title :
System 901: low K, copper MCM-C packaging
Author :
Donohue, P.C. ; Page, J.P. ; Thiele, E.S. ; Hu, Y.H. ; Saltzberg, M.A. ; Gallo, S.A.
Author_Institution :
DuPont Electron., Wilmington, DE, USA
Abstract :
To meet the packaging needs of today´s larger faster IC´s DuPont Electronics has developed system 901. It is based on a crystallizable cordierite dielectric for low K, high strength, silicon matched TCE, combined with high conductivity copper metallization. Processing is easily carried out either with copper electrodes in a H2O/N 2 atmosphere or with CuO electrodes in a burnout/reduction/sinter sequence. In both modes, circuits meet packaging performance requirements, especially distortion-free camber, without the need for constrained-sintering. The achievement of these properties has required an understanding of the origin of the forces affecting sintering, and the development of modifiers to control those forces
Keywords :
copper; glass; metallisation; multichip modules; permittivity; sintering; thermal expansion; Cu; Cu electrodes; CuO; CuO electrodes; DuPont Electronics; H2O-N2; H2O/N2 atmosphere; MCM-C packaging; Si matched TCE; burnout/reduction/sinter sequence; crystallizable cordierite dielectric; high conductivity Cu metallization; system 901; Atmosphere; Circuits; Conductivity; Copper; Crystallization; Dielectrics; Electrodes; Electronics packaging; Metallization; Silicon;
Conference_Titel :
Electronic Components and Technology Conference, 1993. Proceedings., 43rd
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0794-1
DOI :
10.1109/ECTC.1993.346746
