Surface characterization of Zr/O/W Schottky emitter using AES and TOF-SIMS

Author

Matsunaga, Shinichiro ; Katagiri, Souichi

Author_Institution

Central Res. Lab., Hitachi Ltd., Kokubunji, Japan

fYear

2014

fDate

6-10 July 2014

Firstpage

61

Lastpage

62

Abstract

The surface of zirconium/oxygen/tungsten (Zr/O/W) Schottky emitters, which are well-known electron sources with high brightness and high stability, was characterized by performing two surface analytical techniques, namely, auger electron spectroscopy (AES) and time-of-flight secondary ion mass spectroscopy (TOF-SIMS) in room temperature. We investigated bonding state of zirconium, oxygen and tungsten on the surface. Based on the measured spectra, a model of Zr/O/W(100) surface was constructed.

Keywords

Auger electron spectroscopy; Schottky effect; electron sources; oxygen; secondary ion mass spectra; time of flight mass spectra; tungsten; zirconium; AES; Auger electron spectroscopy; TOF-SIMS; Zr-O-W; Zr-O-W Schottky emitter; bonding state; electron sources; surface analytical techniques; surface characterization; temperature 293 K to 298 K; time-of-flight secondary ion mass spectroscopy; zirconium-oxygen-tungsten Schottky emitters; Bonding; Brightness; Irrigation; Mass spectroscopy; Surface treatment; Temperature measurement; Zirconium; Auger electron spectroscopy (AES); Schottky emitter; Time-of-fight secondary ion mass spectroscopy(TOF-SIMS); Zr/O/W;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894759

Filename

6894759