DocumentCode :
230625
Title :
Si tip arrays with ultra-narrow nanoscale charge transfer channel
Author :
Pan, Z.X. ; She, J.C. ; Deng, S.Z. ; Xu, N.S.
Author_Institution :
Sch. of Phys. & Eng., State Key Lab. of Optoelectron. Mater. & Technol., Guangzhou, China
fYear :
2014
fDate :
6-10 July 2014
Firstpage :
75
Lastpage :
76
Abstract :
We report a featured device structure of Si tip with ultra-narrow nanoscale charge transfer channel. The nano-channel, as a resistance, was integrated with individual tips to form the hourglass-like structures. Two-terminal current-voltage tests were performed. The result shows that 10-nm-difference in diameter (70 to 80 nm) of the nano-channel can cause a resistance change of two order in magnitude. We propose that the electronegative nano-channel surface with dangling bonds (surface state) may take the account for the effect.
Keywords :
charge exchange; dangling bonds; field emitter arrays; silicon; Si; dangling bonds; electronegative nanochannel surface; size 70 nm to 80 nm; tip arrays; ultranarrow nanoscale charge transfer channel; Silicon; current-limit elements; nano-channel; resistance; surface state;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location :
Engelberg
Print_ISBN :
978-1-4799-5306-6
Type :
conf
DOI :
10.1109/IVNC.2014.6894766
Filename :
6894766
Link To Document :
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