Photo-enhanced field emission studies of tapered CdS nanobelts

Author

Chavan, P.G. ; More, M.A. ; Joag, D.S. ; Badadhe, Satish S. ; Mulla, I.S.

Author_Institution

Dept. of Phys., Univ. of Pune, Pune, India

fYear

2014

fDate

6-10 July 2014

Firstpage

83

Lastpage

84

Abstract

Field emission and photo-enhanced field emission characteristics of single crystalline tapered CdS nanobelts have been investigated. The turn-on field for the emission current density of ~ 0.1 μA/cm² is found to be ~ 2.1 V/μm, which is much lower than reported values for various CdS nanostructures. The photo-enhanced field emission current shows a reproducible photo-switching behavior with rise in current level nearly four times that of its initial preset value (~ 1 μA) which is found to be very remarkable. Possible mechanism of photo-enhanced field emission is discussed.

Keywords

II-VI semiconductors; cadmium compounds; current density; field emission; nanobelts; photochemistry; wide band gap semiconductors; CdS; current level; emission current density; photo-enhanced field emission current; photoswitching property; tapered nanobelts; turn-on field; Switches; Vacuum technology; Current stability; Field Emission; Nanobelts; Photo-switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894770

Filename

6894770