Peculiarities of electron field emission from SiGe nanoislands

Author

Evtukh, A. ; Steblova, O. ; Yukhimchuk, O. ; Yilmazoglu, Oktay ; Hartnagel, H. ; Mimura, Hidenori

Author_Institution

V. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine

fYear

2014

fDate

6-10 July 2014

Firstpage

90

Lastpage

91

Abstract

The electron field emission and photoassisted field emission from SiGe nanoisland formed by MBE growth are investigated. There are two types of nanoislands, namely the conical and pyramidal ones with different heights. Two slopes in emission current-voltage characteristics in Fowler-Nordheim coordinates were observed and is explained by emission from different SiGe nanoislands. The increase of emission current and decrease the slope of curve in F-N coordinates under green light illumination has been revealed. The model of electron field emission and photoemission from SiGe nanoislands based on energy band diagram of Si-Ge heterostructure has been proposed.

Keywords

Ge-Si alloys; band structure; electron field emission; molecular beam epitaxial growth; nanofabrication; nanostructured materials; photoemission; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; Fowler-Nordheim coordinates; MBE growth; Si-Ge; conical nanoisland; electron field emission; emission current; emission current-voltage characteristics; energy band diagram; green light illumination; molecular beam epitaxial growth; photoassisted field emission; photoemission; pyramidal nanoisland; silicon-germanium heterostructure; silicon-germanium nanoislands; SiGe; electric field enhancement coefficient; electron field emission; nanoislands; photoassisted field emission; work function;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894772

Filename

6894772