Negative conductance of silicon cathode with DLC coating

Author

Goncharuk, N.M. ; Karushkin, N.F.

Author_Institution

Res. Inst. “Orion”, Kiev, Ukraine

fYear

2014

fDate

6-10 July 2014

Firstpage

92

Lastpage

93

Abstract

Microwave impedance of diode structures on base of resonant and non-resonant emission of silicon cathode with diamond like coating (DLC) was investigated in small-signal approach. Negative conductance of the diode is caused by delays of electron emission and transit. Its frequency spectrum is located in sub-millimeter or terahertz frequency range depending on electric field and parameters of cathode coating and transit layer. The last values determine emission conductivity, emission delay time and character of emission (resonant or non-resonant).

Keywords

cathodes; coatings; delays; diamond-like carbon; electric fields; electron emission; microwave diodes; silicon; DLC coating; diamond like coating; diode structures; electric field; electron emission delays; emission conductivity; emission delay time; frequency spectrum; microwave impedance; negative conductance; nonresonant emission; resonant emission; silicon cathode coating; small-signal approach; submillimeter frequency range; terahertz frequency range; transit delays; transit layer; Coatings; Resonant frequency; Time-frequency analysis; DLC cathode; emission and transit delay; negative conductance; resonant and nonresonant electron emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894773

Filename

6894773