Title :
Yellow-green and amber InGaN micro-pixellated light-emitting diode arrays
Author :
Gong, Z. ; Massoubre, D. ; Xie, E.Y. ; McKendry, J. ; Gu, E. ; Dawson, M.D. ; Liu, N.Y. ; Tao, Y.B. ; Chen, Z.Z. ; Zhang, G.Y. ; Pan, Y.B. ; Hao, M.S.
Author_Institution :
Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
Abstract :
Micro-pixel InGaN LED arrays operating at 560nm and 600nm, respectively, are demonstrated, based on new epitaxial structures. Such devices have applications in areas including bioinstrumentation, visible light communications and micro-displays.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; micro-optics; optical arrays; wide band gap semiconductors; InGaN; amber micropixellated light-emitting diode arrays; bioinstrumentation; epitaxial structures; microdisplays; visible light communications; wavelength 560 nm; wavelength 600 nm; yellow-green micropixellated light-emitting diode arrays;
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-5368-9
DOI :
10.1109/PHOTONICS.2010.5699053
