DocumentCode :
2306411
Title :
Image-containing InGaN LEDs for pattern-transfer applications
Author :
Massoubre, D. ; Guilhabert, B. ; Gong, Z. ; Watson, I.M. ; Gu, E. ; Dawson, M.D.
Author_Institution :
Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
647
Lastpage :
648
Abstract :
We report a simple process which enables the fabrication of a single light-emitting diode with spatially patterned emission. The patterning is based on the selective passivation of the p-doped GaN with a CHF3 plasma treatment.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; optical fabrication; passivation; plasma materials processing; wide band gap semiconductors; InGaN; image-containing LED; light-emitting diode fabrication; p-doping; pattern-transfer applications; plasma treatment; selective passivation; spatially patterned emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5699054
Filename :
5699054
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2306411
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