Diode with resonant-tunneling emission

Author

Goncharuk, N.M. ; Karushkin, N.F.

Author_Institution

Res. Inst. “Orion”, Kiev, Ukraine

fYear

2014

fDate

6-10 July 2014

Firstpage

94

Lastpage

95

Abstract

Impedance characteristics of a diode on base of resonant electron emission of gallium nitride micro-cathode with AlGaN-GaN coating and electron transit in vacuum transit layer have been theoretically investigated in the small-signal approach. Dependence of frequency spectrum of negative conductance of the diode on both negative emission conductivity and resonant emission frequency has been analyzed. The analysis has shown different structure of the spectrum (single- or multiband) depending on ratio of emission frequency to optimal transit frequency determined by emission conductivity.

Keywords

III-V semiconductors; aluminium compounds; electron emission; gallium compounds; resonant tunnelling; semiconductor diodes; wide band gap semiconductors; AlGaN-GaN; electron transit; frequency spectrum; microcathode; negative conductance; negative emission conductivity; resonant electron emission; resonant emission frequency; resonant tunneling emission; small signal approach; vacuum transit layer; Conductivity; Gallium nitride; Lead; Resonant frequency; Resonant tunneling devices; gallium nitride; multilayer cathode; negative conductance; resonant electron emission; terahertz frequencies;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894774

Filename

6894774