DocumentCode :
2306522
Title :
Effect of material interactions during thermal shock testing on IC package reliability
Author :
Chen, A.S. ; Nguyen, L.T. ; Gee, S.A.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
fYear :
1993
fDate :
1-4 Jun 1993
Firstpage :
693
Lastpage :
700
Abstract :
When large devices are molded in plastic, typically a low-stress epoxy compound is used together with a polyimide stress-relief coating. However, the interaction of these two materials, along with the die attach, is not well understood. Adverse interfacial effects on the plastic-encapsulated devices can occur with the selection of the wrong combination of materials. With increasing die size, reliability becomes an important concern. Using the optimum combination of materials should provide the longest-lived packages. However, that combination is not known at this time. This study attempts at elucidating the interaction of three main material components in a plastic package: mold compound, die attach, and die coating
Keywords :
circuit reliability; delamination; encapsulation; failure analysis; integrated circuit technology; integrated circuit testing; polymer films; protective coatings; thermal shock; thermal stress cracking; thermal stresses; -65 to 150 C; IC package reliability; IC testing; PQFP packages; delamination; die attach; die coating; electrical failures; failure rate; interfacial effects; low-stress epoxy compound; material interactions; mold compound; package cracking; plastic package; plastic-encapsulated devices; polyimide stress-relief coating; reliability qualification testing; thermal shock testing; Coatings; Electric shock; Integrated circuit packaging; Integrated circuit testing; Materials reliability; Materials testing; Microassembly; Polyimides; Semiconductor device packaging; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 1993. Proceedings., 43rd
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0794-1
Type :
conf
DOI :
10.1109/ECTC.1993.346774
Filename :
346774
Link To Document :
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