Title :
An assessment of mechanical reliability of a die-bonded chip package during chip encapsulation and accelerated thermal cycling
Author :
Ramakrishna, K. ; Lo, J.C. ; Guo, Y.
Author_Institution :
Electron. Packaging Technol. Products, IBM Corp., Endicott, NY, USA
Abstract :
Thermo-mechanical stresses induced during encapsulation and accelerated thermal cycling (ATC) of a chip solder die bonded to a card consisting of a thermal carrier and a thick heat sink has been analyzed using a two-dimensional linear elastic finite element (FE) model. The FE model is first verified against the displacement fields measured using laser moire interferometry. A parametric study of the effect of encapsulant thickness, Young´s modulus, coefficient of thermal expansion, and chip size, on die and encapsulant stresses has been carried out. Potential for die and encapsulant cracking, and delamination at the die/encapsulant interfaces have been assessed. The results are useful in selecting a suitable encapsulant material to minimize the risk of die cracking. Thermo-mechanical strain induced in the solder bond during ATC has also been computed using an elasto-plastic FE analysis. Number of ATC cycles to failure of the solder bond have been estimated by combining FE results with Coffin-Manson equation for solder
Keywords :
Young´s modulus; circuit reliability; deformation; delamination; encapsulation; failure analysis; finite element analysis; integrated circuit technology; life testing; packaging; stress analysis; thermal expansion; thermal stress cracking; thermal stresses; Young´s modulus; accelerated thermal cycling; chip encapsulation; chip size; chip solder die; coefficient of thermal expansion; cracking; delamination; die-bonded chip package; die/encapsulant interfaces; displacement fields; elasto-plastic FE analysis; encapsulant thickness; finite element model; heat sink; laser moire interferometry; mechanical reliability; solder bond failure; thermal carrier; thermo-mechanical strain; thermo-mechanical stresses; two-dimensional linear elastic FE model; Acceleration; Bonding; Displacement measurement; Encapsulation; Finite element methods; Heat sinks; Laser modes; Semiconductor device measurement; Thermal stresses; Thermomechanical processes;
Conference_Titel :
Electronic Components and Technology Conference, 1993. Proceedings., 43rd
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0794-1
DOI :
10.1109/ECTC.1993.346777