Development of novel CNT field emitter array with gate electrode

Author

Kato, Shigeo ; Chouhan, Vijay ; Noguchi, Takashi ; Tsujinno, Soichiro

Author_Institution

Accel. Lab., KEK, Tsukuba, Japan

fYear

2014

fDate

6-10 July 2014

Firstpage

132

Lastpage

133

Abstract

We have been developing CNT emitter to aim a high current density of a couple of 100A/cm² and a high total current up to 100mA. A current density over 300 A/cm² at 9.6MV/m and a total current of 15 mA was already achieved in a continuous DC mode. Such a high current density is attributed to so called rooting technique of CNT into the substrate. In order to increase a total emission current keeping a high current density and to avoid emittance growth, fabrication of a field emitter array with a gate was tried. The fabricated FEA was tested at an electron gun test stand in PSI and its preliminary beam characteristics were measured.

Keywords

carbon nanotubes; current density; electrodes; electron device testing; electron guns; field emitter arrays; CNT field emitter array; CNT rooting technique; PSI; carbon nanotube; continuous DC mode; current 15 mA; current density; electron gun test; emission current; emittance growth; gate electrode; preliminary beam characteristic; substrate; Arrays; Current density; Electric fields; Lifetime estimation; Logic gates; Titanium; carbon nanotubes; field emitter array; film emitter; high current density; rooting;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894787

Filename

6894787