Enhancement in the field emission behavior of graphene in N2/O2 high vacuum ambience

Author

Suryawanshi, S.R. ; Kolhe, P.S. ; Gavhane, D.S. ; Patil, S.S. ; Chavan, P.G. ; More, M.A. ; Late, Dattatray J.

Author_Institution

Dept. of Phys., Univ. of Pune, Pune, India

fYear

2014

fDate

6-10 July 2014

Firstpage

155

Lastpage

156

Abstract

Herein we report, pressure dependent field emission (FE) behaviour of a few-layer graphene emitter. Gas dependent FE properties have been investigated in ultra high vacuum (UHV), as well as in N₂ and O₂ ambience at base pressure ~ 1×10^-6 torr. Interestingly, the graphene emitter when operated in N₂/O₂ ambience exhibits lower turn-on field and higher emission current density, as compared to the UHV conditions. The emission current stability investigated at preset value of ~1μA over the period of more than 2 hrs is found better in the N₂ ambience and is characterized by fewer fluctuations, in contrast to the behaviour in the O₂ ambience. The observed enhanced electron emission behavior in N₂/O₂ ambience is attributed to modulation of the work function of graphene emitter.

Keywords

current density; field emission; fluctuations; graphene; C; N₂-O₂ high vacuum ambience; emission current stability; few-layer graphene emitter; fluctuations; gas-dependent field emission properties; higher emission current density; lower turn-on field; pressure-dependent field emission enhancement behavior; ultrahigh vacuum; work function; Current density; Graphene; Iron; Modulation; Physics; Thermal stability; Vacuum technology; Graphene; Pressure Dependent Field Emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2014 27th International

Conference_Location

Engelberg

Print_ISBN

978-1-4799-5306-6

Type

conf

DOI

10.1109/IVNC.2014.6894791

Filename

6894791