Title :
40 GHz modulation bandwidth of electroabsorption modulator with narrow-mesa ridge waveguide
Author :
Tada, H. ; Miyazaki, Y. ; Takagi, K. ; Aoyagi, T. ; Nishimura, T. ; Omura, E.
Author_Institution :
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
We have developed the EA modulator with narrow-ridge waveguide to obtain the sufficient extinction ratio with the shorter modulators. Narrowing the waveguide reduces device capacitance from 0.12 pF to 0.08 pF without decrease of the extinction ratio. The modulation bandwidth of 40 GHz at -1 V bias voltage, and the extinction ratio of 15 dB at 0 V to -2.5 V operation voltage are obtained. From the viewpoint of frequency bandwidth and extinction ratio for practical use, it may be concluded that the narrow mesa waveguide structure is suitable for 40 Gb/s optical transmitter devices.
Keywords :
electro-optical modulation; electroabsorption; integrated optics; optical transmitters; optical waveguides; 0 to -2.5 V; 0.12 to 0.08 pF; 1 V; 40 GHz; 40 Gbit/s; EA modulator; GHz modulation bandwidth; Gb/s optical transmitter devices; bias voltage; device capacitance; electroabsorption modulator; extinction ratio; frequency bandwidth; modulation bandwidth; narrow mesa waveguide structure; narrow-ridge waveguide; operation voltage; Bandwidth; Frequency measurement; Inverters; Optical devices; Optical feedback; Optical noise; Optical sensors; Optical signal processing; Optical wavelength conversion; Signal to noise ratio;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036675
