• DocumentCode
    2306952
  • Title

    Origin of resonant peaks in plasmonic dots-in-a-well infrared detectors

  • Author

    Shenoi, R.V. ; Gin, A. ; Rosenberg, J. ; Shao, J. ; Painter, O.J. ; Krishna, S.

  • Author_Institution
    Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    712
  • Lastpage
    713
  • Abstract
    Resonant peaks in plasmonic dots-in-a-well infrared detector is reported. The detectors used here have active layers with InAs quantum dots embedded in InGaAs/GaAs quantum wells. The active region is embedded in heavily n-doped GaAs top and bottom contacts and has a thick Al0.7Ga0.3As layer below the bottom contact as a cladding.
  • Keywords
    III-V semiconductors; aluminium compounds; claddings; gallium arsenide; indium compounds; infrared detectors; integrated optics; optical films; photodetectors; plasmonics; quantum well devices; semiconductor quantum dots; Al0.7Ga0.3As; InGaAs-GaAs; cladding; n-doped semiconductor; plasmonic dot-in-a-well infrared detectors; quantum dots; quantum wells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5699087
  • Filename
    5699087
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2306952