DocumentCode :
2306952
Title :
Origin of resonant peaks in plasmonic dots-in-a-well infrared detectors
Author :
Shenoi, R.V. ; Gin, A. ; Rosenberg, J. ; Shao, J. ; Painter, O.J. ; Krishna, S.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
712
Lastpage :
713
Abstract :
Resonant peaks in plasmonic dots-in-a-well infrared detector is reported. The detectors used here have active layers with InAs quantum dots embedded in InGaAs/GaAs quantum wells. The active region is embedded in heavily n-doped GaAs top and bottom contacts and has a thick Al0.7Ga0.3As layer below the bottom contact as a cladding.
Keywords :
III-V semiconductors; aluminium compounds; claddings; gallium arsenide; indium compounds; infrared detectors; integrated optics; optical films; photodetectors; plasmonics; quantum well devices; semiconductor quantum dots; Al0.7Ga0.3As; InGaAs-GaAs; cladding; n-doped semiconductor; plasmonic dot-in-a-well infrared detectors; quantum dots; quantum wells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5699087
Filename :
5699087
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2306952
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