• DocumentCode
    2306985
  • Title

    Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell

  • Author

    Fu, L. ; Jolley, G. ; Lu, H.F. ; Majid, A. ; Tan, H.H. ; Jagadish, C.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2010
  • fDate
    7-11 Nov. 2010
  • Firstpage
    716
  • Lastpage
    717
  • Abstract
    This paper investigated the temperature effect on the electrical properties of an In0.5Ga0.5As/GaAs QD solar cell, leading to a better understanding of the basic cell characteristics influenced by QD incorporation which is of great importance for future design of high efficiency QD solar cells.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; solar cells; thermoelectricity; InGaAs-GaAs; QD solar cells; electrical properties; quantum dot solar cell; temperature effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Photonics Society, 2010 23rd Annual Meeting of the
  • Conference_Location
    Denver, CO
  • ISSN
    -
  • Print_ISBN
    978-1-4244-5368-9
  • Electronic_ISBN
    -
  • Type

    conf

  • DOI
    10.1109/PHOTONICS.2010.5699089
  • Filename
    5699089
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2306985