DocumentCode :
2306985
Title :
Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell
Author :
Fu, L. ; Jolley, G. ; Lu, H.F. ; Majid, A. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2010
fDate :
7-11 Nov. 2010
Firstpage :
716
Lastpage :
717
Abstract :
This paper investigated the temperature effect on the electrical properties of an In0.5Ga0.5As/GaAs QD solar cell, leading to a better understanding of the basic cell characteristics influenced by QD incorporation which is of great importance for future design of high efficiency QD solar cells.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; solar cells; thermoelectricity; InGaAs-GaAs; QD solar cells; electrical properties; quantum dot solar cell; temperature effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Photonics Society, 2010 23rd Annual Meeting of the
Conference_Location :
Denver, CO
ISSN :
-
Print_ISBN :
978-1-4244-5368-9
Electronic_ISBN :
-
Type :
conf
DOI :
10.1109/PHOTONICS.2010.5699089
Filename :
5699089
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2306985
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