DocumentCode
230699
Title
Field emission characteristics of graphene/h-BN structure
Author
Yamada, Tomoaki ; Masuzawa, Toru ; Neo, Yoichiro ; Mimura, Hidenori ; Ebisudani, Taishi ; Okano, Kunihisa ; Taniguchi, Takafumi
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear
2014
fDate
6-10 July 2014
Firstpage
182
Lastpage
183
Abstract
Graphene/hexagonal boron nitride (h-BN) was characterized. Field emission from graphene/h-BN/Si structure showed low threshold voltage and enhanced emission current. Fowler-Nordheim (F-N) plots were applied to discuss the obtained field emission properties. We also examined work function using ultraviolet photoelectron spectroscopy (UPS). The obtained data suggested that graphene modified work function and possibility of graphene field emitters.
Keywords
boron compounds; electron field emission; graphene; ultraviolet photoelectron spectra; work function; C-BN; Fowler-Nordheim plots; UPS; emission current; field emission properties; graphene-hexagonal boron nitride structure; threshold voltage; ultraviolet photoelectron spectroscopy; work function; Educational institutions; Graphene; Silicon; Substrates; Threshold voltage; Voltage measurement; field emission; graphene; hexagonal boron nitreide; work function;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location
Engelberg
Print_ISBN
978-1-4799-5306-6
Type
conf
DOI
10.1109/IVNC.2014.6894801
Filename
6894801
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