DocumentCode :
2307025
Title :
Bonding induced stress in semiconductor laser
Author :
Varma, R.R. ; Parayanthal, P.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fYear :
1993
fDate :
1-4 Jun 1993
Firstpage :
482
Lastpage :
484
Abstract :
The TM mode in a semiconductor laser is often associated with tensile stress and therefore the laser fabrication processes are optimized so that the active waveguide layer is in compression. Our experiments suggest that hard solder such as AuSn induces compressive stress in the laser chip which is dependent on the process and the submount material. Using a thermal expansion model we have calculated the stress in the laser chip for various submount materials
Keywords :
internal stresses; optical workshop techniques; semiconductor lasers; semiconductor technology; soldering; thermal expansion; AuSn; TM mode; active waveguide layer; bonding; compressive stress; hard solder; laser chip; laser fabrication; semiconductor laser; submount material; tensile stress; thermal expansion model; Bonding; Compressive stress; Laser modes; Optical device fabrication; Optical materials; Semiconductor lasers; Semiconductor waveguides; Tensile stress; Thermal stresses; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 1993. Proceedings., 43rd
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-0794-1
Type :
conf
DOI :
10.1109/ECTC.1993.346802
Filename :
346802
Link To Document :
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