Title :
5 GHz Power Amplifier Design with AMS 0.35 μm SiGe BiCMOS Technology for IEEE 802.11a WLAN
Author :
Kavlak, C. ; Tekin, I.
Author_Institution :
Muhendislik ve Doga Bilimleri Fakultesi, Sabanci Univ., Istanbul
Abstract :
In this work, a 5 GHz radio frequency power amplifier for 802.11a wireless LAN applications has been designed in Austria Micro Systems (AMS) 0.35 mum SiGe BiCMOS (ft=60 GHz) technology. At 5 GHz frequency and 3.3 V supply voltage, output power of 16.364 dBm and power added efficiency (PAE) of 36.819 % are achieved from single discrete SiGe BiCMOS HBT (npn 254H5) with 0.35 mum emitter width. The output 1 dB compression point at 3.3 V is 11.86 dBm with a PAE of 21%
Keywords :
BiCMOS integrated circuits; germanium compounds; heterojunction bipolar transistors; power amplifiers; radiofrequency amplifiers; silicon compounds; wireless LAN; 0.35 micron; 3.3 V; 5 GHz; AMS; Austria Micro System; IEEE 802.11a wireless LAN; PAE; SiGe; SiGe BiCMOS HBT technology; heterojunction bipolar transistor; local area network; power added efficiency; radio frequency power amplifier; BiCMOS integrated circuits; Germanium silicon alloys; Power amplifiers; Power generation; Power supplies; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Voltage; Wireless LAN;
Conference_Titel :
Signal Processing and Communications Applications, 2006 IEEE 14th
Conference_Location :
Antalya
Print_ISBN :
1-4244-0238-7
DOI :
10.1109/SIU.2006.1659888
