Design of a 4.2-5.4 GHz LC VCO for IEEE 802.11a Applications

Author

Esame, Onur ; Tekin, Ibrahim

Author_Institution

Mikroelektron. Muhendisligi Bolumu, Sabanci Univ., Istanbul

fYear

2006

fDate

17-19 April 2006

Firstpage

1

Lastpage

4

Abstract

In this paper, a 4.2-5.4 GHz, -G_m LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mum SiGe BiCMOS process that includes high-speed SiGe heterojunction bipolar transistors (HBTs). Phase noise is -110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and -113.5 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained utilizing accumulation-mode MOS varactors. Phase noise is relatively low due to taking the advantage of differential tuning concept. Output power of the fundamental frequency changes between 3 mW and 3.5 mW depending on the tuning voltage. The circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit occupies an area of 0.6 mm² on Si substrate

Keywords

BiCMOS integrated circuits; IEEE standards; germanium compounds; heterojunction bipolar transistors; phase noise; silicon compounds; telecommunication standards; varactors; voltage-controlled oscillators; wireless LAN; 0.35 micron; 4.2 to 5.4 GHz; HBT; IEEE 802.11a standard; LC voltage controlled oscillator; SiGe; SiGe BiCMOS process; VCO; accumulation-mode MOS varactor; heterojunction bipolar transistor; metal-oxide semiconductor; phase noise; BiCMOS integrated circuits; Circuit optimization; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Phase noise; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Processing and Communications Applications, 2006 IEEE 14th

Conference_Location

Antalya

Print_ISBN

1-4244-0238-7

Type

conf

DOI

10.1109/SIU.2006.1659890

Filename

1659890