DocumentCode
2307214
Title
The relation between oxide degradation and oxide breakdown
Author
Felsch, C. ; Rosenbaum, E.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fYear
1995
fDate
4-6 April 1995
Firstpage
142
Lastpage
148
Abstract
A novel oxide stressing procedure is used to determine the relation between oxide degradation and oxide breakdown. Results suggest that the mechanism of oxide breakdown depends on the oxide thickness. In 5 and 7 nm oxides, electron trap generation correlates with oxide breakdown. In 10 nm oxide, positive charge trapping correlates with oxide breakdown.
Keywords
MIS structures; MOS capacitors; dielectric thin films; electric breakdown; electron traps; hole traps; interface states; leakage currents; silicon compounds; 5 to 10 nm; MOS capacitors; SiO/sub 2/; electron trap generation; interface traps; nMOSFET; oxide breakdown; oxide degradation; oxide stressing procedure; oxide thickness; positive charge trapping; stress induced leakage currents; Charge carrier processes; Degradation; Electric breakdown; Electron traps; Frequency; MOSFET circuits; Monitoring; Stress; Virtual manufacturing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location
Las Vegas, NV
Print_ISBN
0-7803-2031-X
Type
conf
DOI
10.1109/RELPHY.1995.513667
Filename
513667
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