DocumentCode
230726
Title
Challenges of high vacuum pumping based on impact ionization and implantation processes
Author
Fomani, Arash A. ; Velasquez-Garcia, L.F. ; Akinwande, Akintunde Ibitayo
Author_Institution
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear
2014
fDate
6-10 July 2014
Firstpage
210
Lastpage
211
Abstract
Electron impact ionization and ion implantation processes were performed in a miniature test chamber (0.7 cm3) to investigate the possibility of high vacuum pumping. The test chamber can be connected to or isolated from a pressure-controlled vacuum chamber for precise control of the initial experimental conditions. Despite, ion implantation into the getter (confirmed by SIMS measurements) at quantities 50× of the gas phase molecules, the pressure of the chamber increased during operation of the field emitter array. This pressure rise can be attributed to outgassing of the surface adsorbed molecules due to electron bombardment.
Keywords
electron bombarded semiconductor devices; field emitter arrays; impact ionisation; ion implantation; vacuum pumps; electron bombardment; electron impact ionization; field emitter array; high vacuum pumping; ion implantation processes; pressure controlled vacuum chamber; surface adsorbed molecules; test chamber; Current measurement; Gettering; Impact ionization; Ion implantation; Pressure measurement; electron impact ionization; field emission; on-chip vacuum pumps;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location
Engelberg
Print_ISBN
978-1-4799-5306-6
Type
conf
DOI
10.1109/IVNC.2014.6894813
Filename
6894813
Link To Document