• DocumentCode
    230726
  • Title

    Challenges of high vacuum pumping based on impact ionization and implantation processes

  • Author

    Fomani, Arash A. ; Velasquez-Garcia, L.F. ; Akinwande, Akintunde Ibitayo

  • Author_Institution
    Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2014
  • fDate
    6-10 July 2014
  • Firstpage
    210
  • Lastpage
    211
  • Abstract
    Electron impact ionization and ion implantation processes were performed in a miniature test chamber (0.7 cm3) to investigate the possibility of high vacuum pumping. The test chamber can be connected to or isolated from a pressure-controlled vacuum chamber for precise control of the initial experimental conditions. Despite, ion implantation into the getter (confirmed by SIMS measurements) at quantities 50× of the gas phase molecules, the pressure of the chamber increased during operation of the field emitter array. This pressure rise can be attributed to outgassing of the surface adsorbed molecules due to electron bombardment.
  • Keywords
    electron bombarded semiconductor devices; field emitter arrays; impact ionisation; ion implantation; vacuum pumps; electron bombardment; electron impact ionization; field emitter array; high vacuum pumping; ion implantation processes; pressure controlled vacuum chamber; surface adsorbed molecules; test chamber; Current measurement; Gettering; Impact ionization; Ion implantation; Pressure measurement; electron impact ionization; field emission; on-chip vacuum pumps;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
  • Conference_Location
    Engelberg
  • Print_ISBN
    978-1-4799-5306-6
  • Type

    conf

  • DOI
    10.1109/IVNC.2014.6894813
  • Filename
    6894813