DocumentCode
230747
Title
Multi-electron-beam nanoelectronics
Author
Kruit, P.
Author_Institution
Dept. of Imaging Phys., Delft Univ. of Technol., Delft, Netherlands
fYear
2014
fDate
6-10 July 2014
Firstpage
220
Lastpage
221
Abstract
For high throughput electron microscopy and lithography, the only option is to use multi-electron beam systems. For microscopy, a significant advance can be made with a system of about 100 beams in parallel. For lithography to be used as a direct write method of integrated circuits, hundreds of thousands of beams are necessary. For focusing, deflection and blanking of the beams, special vacuum nanoelectronics has been developed. The ultimate example is a beam blanker that can switch 129.948 beams at 70 Mbps per beam.
Keywords
electron beams; electron microscopy; nanolithography; vacuum microelectronics; beam blanker; beam blanking; beam deflection; beam focusing; direct write method; electron microscopy; integrated circuits; lithography; multielectron beam nanoelectronics; vacuum nanoelectronics; Acceleration; Arrays; Image resolution; Integrated optics; Micromechanical devices; Optical imaging; electron beam blanking; electron beam lithography; electron microscopy; vacuum nanoelectronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location
Engelberg
Print_ISBN
978-1-4799-5306-6
Type
conf
DOI
10.1109/IVNC.2014.6894823
Filename
6894823
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