High aspect ratio silicon tip cathodes for application in field emission electron sources

Precisely aligned arrays of sharp tip structures on top of elongated pillars were realized by using an improved fabrication process including an additional inductively-coupled-plasma reactive-ion etching step. Arrays of n-type and p-type silicon with 271 tips have been fabricated and investigated. Those structures have a total height of 5-6 μm and apex radii less than 20nm. Integral field emission measurements of the arrays yielded low onset-fields in the range of 8-12V=μm and field enhancement factors between 300 and 700. The I-E curves of n-type structures showed the usual Fowler-Nordheim behaviour, whereas p-type structures revealed a significant saturation region due to the limited number of electrons in the conduction band and a further carrier depletion effect caused by the pillar. The maximum integral current in the saturation region was 150 nA at fields above 30V=μm. An excellent stability of the emission current of less than ± 2% fluctuation was observed in the saturation region. For n-type Si a maximum integral current of 10 μA at 24V=μm and an average current stability with a fluctuation of ± 50% were measured.