• DocumentCode
    230758
  • Title

    Fabrication of a novel TiO2/CNT based transistor

  • Author

    Monshipouri, Mahta ; Abdi, Younes ; Barati, F.

  • Author_Institution
    Dept. of Phys., Univ. of Tehran, Tehran, Iran
  • fYear
    2014
  • fDate
    6-10 July 2014
  • Firstpage
    232
  • Lastpage
    233
  • Abstract
    What we present is fabrication of a novel TiO2/CNT based transistor. Vertically aligned CNTs have been grown on a silicon substrate. The CNTs were then encapsulated by TiO2 nanoparticles, which act as the gate material and are responsible for controlling the field emission current from CNTs. The field emitted electron beam can also be used for lithography, where the diameter of beam can be controlled by gate voltage.
  • Keywords
    carbon nanotubes; electron beam lithography; electron field emission; nanolithography; nanoparticles; silicon; titanium compounds; transistors; CNT fabrication; TiO2; carbon nanotubes; field emission current; field emitted electron beam; gate material; gate voltage; lithography; nanoparticles; silicon substrate; transistor; Annealing; Irrigation; Logic gates; Nanotubes; Substrates; carbon nanotubes; field emission transistor; nano-lithography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
  • Conference_Location
    Engelberg
  • Print_ISBN
    978-1-4799-5306-6
  • Type

    conf

  • DOI
    10.1109/IVNC.2014.6894829
  • Filename
    6894829
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=230758