DocumentCode :
230761
Title :
Oxidation endurance of boron nitride nanotube field emitters
Author :
Yenan Song ; Dong Hoon Shin ; Ki Nam Yun ; Cheol Jin Lee ; Yoon-Ho Song ; Milne, W.I.
Author_Institution :
Dept. of Micro/Nano Syst., Korea Univ., Seoul, South Korea
fYear :
2014
fDate :
6-10 July 2014
Firstpage :
235
Lastpage :
236
Abstract :
Boron nitride (BN) nanomaterials have negative electron affinity, which makes BN a promising cold electron emission material. BN nanotube (BNNT) field emitters show excellent oxidation endurance after high temperature thermal annealing at 600 °C in air ambient. There is no damage to the BNNTs after the thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. In this work, the thermal annealed BNNTs exhibit a high maximum emission current density of 8.39 mA/cm2 and robust long-term emission stability. The results reveal that BNNTs can be a promising emitter material for field emission devices under harsh environments.
Keywords :
annealing; boron compounds; current density; electron affinity; field emitter arrays; nanostructured materials; nanotube devices; oxidation; BN; boron nitride nanomaterials; boron nitride nanotube field emitters; cold electron emission material; emission current density; emission stability; emitter material; field emission devices; field emission properties; negative electron affinity; oxidation endurance; temperature 600 degC; thermal annealing; Annealing; Mixers; Nanotechnology; Thermal engineering; Boron nitride nanotubes; Field emission; Oxidation endurance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2014 27th International
Conference_Location :
Engelberg
Print_ISBN :
978-1-4799-5306-6
Type :
conf
DOI :
10.1109/IVNC.2014.6894830
Filename :
6894830
Link To Document :
بازگشت