DocumentCode :
2308030
Title :
Two-Dimensional Model and Simulation of Enhanced Sensitivity PIN Photodiode Detector for 3D Imager
Author :
Jin, Xiangliang ; Zeng, Yicheng
Author_Institution :
Fac. of Mater. & Photo-Electron. Phys., Xiangtan Univ., Xiangtan, China
Volume :
3
fYear :
2010
fDate :
13-14 March 2010
Firstpage :
1059
Lastpage :
1062
Abstract :
In this paper, a kind of enhanced sensitivity PIN photodiode detector is proposed applying for 3D image sensor. Based on 130 nm CMOS image sensor process, the two dimensional model of both traditional and enhanced sensitivity has been built up for simulation. Process and electrical parameters are simulated and extracted by using physical modeling packages SILVACO. The device simulation results show that high sensitivity and wide spectral response of proposed PIN photodiode is better than that of traditional PIN photodiode.
Keywords :
CMOS image sensors; p-i-n photodiodes; 2D model; 3D image sensor; CMOS image sensor; PIN photodiode detector; electrical parameters; enhanced sensitivity; physical modeling packages; Boron; CMOS image sensors; Charge-coupled image sensors; Detectors; Doping; Image sensors; PIN photodiodes; Packaging; Robot vision systems; Semiconductor device modeling; 3D Imager; Modeling; PIN photodiode; Simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Measuring Technology and Mechatronics Automation (ICMTMA), 2010 International Conference on
Conference_Location :
Changsha City
Print_ISBN :
978-1-4244-5001-5
Electronic_ISBN :
978-1-4244-5739-7
Type :
conf
DOI :
10.1109/ICMTMA.2010.500
Filename :
5460300
Link To Document :
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