Title :
Low carrier removal rates and annealing behavior of thermally diffused p+n (Cd,S) InP structures after 1013 cm -2 3 MeV proton irradiation
Author :
Faur, M. ; Faur, M. ; Flood, D.J. ; Weinberg, I. ; Goradia, C. ; Goradia, M. ; Vargas-Aburto, C.
Author_Institution :
Dept. of Electr. Eng., Cleveland State Univ., OH, USA
Abstract :
On bare p+n (Cd,S) InP diffused solar cells, the authors recorded AMO, 25°C Voc values exceeding 880 mV. In this work they present some of their most recent results showing much lower carrier removal rates in the emitter of p+n (Cd,S) diffused structures as compared to p+n (Zn,S) structures after irradiation with 1013 cm-2, 3 MeV protons. They also show the complete recovery of emitter carrier concentration profiles of p+n (Cd,S) structures after about 2 months in the dark at room temperature, a behavior not observed for p+n (Zn,S) structures. The drop in ISC, FF and efficiency of diffused p+n (Cd,S) InP cells after proton irradiation is lower than previously reported values for n+p (Si,Zn) InP cells fabricated by MOCVD or n+p (S,Zn) InP cells fabricated by diffusion
Keywords :
III-V semiconductors; annealing; carrier density; indium compounds; materials preparation; minority carriers; proton effects; solar cells; thermal diffusion; 25 C; 3 MeV; AMO; InP:Cd,S; InP:Si,Zn; InP:Zn,S; MOCVD; annealing behavior; emitter; emitter carrier concentration profiles recovery; low carrier removal rates; p+n (Zn,S) structures; proton irradiation; thermally diffused p+n (Cd,S) InP structures; Annealing; Coatings; Indium phosphide; MOCVD; NASA; Photovoltaic cells; Protons; Temperature; Thermal resistance; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.346905
