Title :
Electrical characterization of ITO/p-InP solar cells
Author :
Shi, Z.Q. ; Jia, Q.X. ; He, L. ; Chang, L.H. ; Lee, H.J. ; Anderson, W.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York, Amherst, NY, USA
Abstract :
Indium tin oxide (ITO)/p-InP solar diodes were fabricated by RF magnetron sputtering with variables of hydrogen during deposition, substrate temperature and in one case, an 80 Å Sn:In layer between ITO and InP. Analysis by current-voltage-temperature and spectroscopic techniques reveal the healing effect of adding H2 during deposition of ITO. Higher substrate temperature during ITO deposition gives improved ITO films but induces more surface defects. Current conduction is predominantly by thermionic emission. An 80 Å In:Sn layer between InP and ITO causes a significant change in all measured data
Keywords :
III-V semiconductors; deep level transient spectroscopy; indium compounds; photoreflectance; semiconductor device testing; solar cells; sputter deposition; sputtered coatings; tin compounds; 80 A; H2; ITO-InP; ITO/p-InP solar cells; InSnO-InP; RF magnetron sputtering; Sn:In layer; current conduction; current-voltage-temperature technique; deep level transient spectroscopy; deposition; electrical characterization; fabrication; hydrogen; photoreflectance spectroscopy; solar diodes; spectroscopic techniques; substrate temperature; surface defects; thermionic emission; Diodes; Hydrogen; Indium phosphide; Indium tin oxide; Magnetic analysis; Photovoltaic cells; Radio frequency; Spectroscopy; Sputtering; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location :
Louisville, KY
Print_ISBN :
0-7803-1220-1
DOI :
10.1109/PVSC.1993.346906
