Low resistivity high efficiency silicon solar cell for potential space application

Author

Chen, W.J. ; Luo, R.X. ; Chen, J.H. ; Xiao, Z.B. ; Chen, Z.N.

Author_Institution

Tianjin Inst. of Power Sources, China

fYear

1993

fDate

10-14 May 1993

Firstpage

1409

Lastpage

1414

Abstract

Considering the potential space application of high efficiency silicon solar cells, which have been developed significantly in by the use of low resistivity float zoned silicon as the substrates, the cell structure and processing have been modified so that a large area low resistivity high efficiency silicon solar cell will be space qualified and can be put into production. 16% efficient (AMO, 25°C) and space qualified 2 cm×4 cm and 2 cm×6 cm silicon solar cells with polished surfaces have been fabricated in the laboratory

Keywords

electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; photovoltaic power systems; silicon; solar cells; space vehicle power plants; zone melting; 16.5 percent; 25 C; Si; Si solar cell; float zoned silicon; high efficiency; low resistivity; polished surfaces; potential space application; silicon solar cell; space qualified cells; substrates; Circuits; Conductivity; Dark current; Gallium arsenide; Low earth orbit satellites; Photovoltaic cells; Silicon; Space missions; Surface texture; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE

Conference_Location

Louisville, KY

Print_ISBN

0-7803-1220-1

Type

conf

DOI

10.1109/PVSC.1993.346910

Filename

346910