DocumentCode
2308250
Title
Ultrathin, directly glassed, GaAs solar cells
Author
Hardingham, C. ; Huggins, C. ; Cross, T. ; Gray, A. ; Mullaney, K. ; Kitchen, C.
Author_Institution
EEV Ltd., Chelmsford, UK
fYear
1993
fDate
10-14 May 1993
Firstpage
1399
Lastpage
1403
Abstract
Due to its direct bandgap and high optical absorption coefficient, GaAs offers the potential for ultrathin (<10 micron) solar cells. Such cells have a very high output power per unit mass, and applications both as single junction cells and as top cells to mechanically stacked multijunction cells. This paper reports the development of ultrathin GaAs solar cells, with results up to 20% AMO 1 sun, based on conventional coverglass and interconnect techniques. Direct (glueless) bonding of coverglass to GaAs materials and cells are also reported. To achieve a direct bond, an electric field is placed across the cell and coverglass, whilst they are held in compression at an elevated temperature. Progress towards developing a directly glassed, ultrathin GaAs solar cell is reported
Keywords
III-V semiconductors; adhesion; gallium arsenide; solar cells; GaAs; GaAs solar cells; directly glassed solar cells; electric field; glueless bonding; mechanically stacked multijunction cells; single junction cells; top cells; ultrathin solar cells; Absorption; Bonding; Epitaxial growth; Etching; Gallium arsenide; Photonic band gap; Photovoltaic cells; Space technology; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
Conference_Location
Louisville, KY
Print_ISBN
0-7803-1220-1
Type
conf
DOI
10.1109/PVSC.1993.346912
Filename
346912
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