• DocumentCode
    2308250
  • Title

    Ultrathin, directly glassed, GaAs solar cells

  • Author

    Hardingham, C. ; Huggins, C. ; Cross, T. ; Gray, A. ; Mullaney, K. ; Kitchen, C.

  • Author_Institution
    EEV Ltd., Chelmsford, UK
  • fYear
    1993
  • fDate
    10-14 May 1993
  • Firstpage
    1399
  • Lastpage
    1403
  • Abstract
    Due to its direct bandgap and high optical absorption coefficient, GaAs offers the potential for ultrathin (<10 micron) solar cells. Such cells have a very high output power per unit mass, and applications both as single junction cells and as top cells to mechanically stacked multijunction cells. This paper reports the development of ultrathin GaAs solar cells, with results up to 20% AMO 1 sun, based on conventional coverglass and interconnect techniques. Direct (glueless) bonding of coverglass to GaAs materials and cells are also reported. To achieve a direct bond, an electric field is placed across the cell and coverglass, whilst they are held in compression at an elevated temperature. Progress towards developing a directly glassed, ultrathin GaAs solar cell is reported
  • Keywords
    III-V semiconductors; adhesion; gallium arsenide; solar cells; GaAs; GaAs solar cells; directly glassed solar cells; electric field; glueless bonding; mechanically stacked multijunction cells; single junction cells; top cells; ultrathin solar cells; Absorption; Bonding; Epitaxial growth; Etching; Gallium arsenide; Photonic band gap; Photovoltaic cells; Space technology; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1993., Conference Record of the Twenty Third IEEE
  • Conference_Location
    Louisville, KY
  • Print_ISBN
    0-7803-1220-1
  • Type

    conf

  • DOI
    10.1109/PVSC.1993.346912
  • Filename
    346912