Title :
Reliability purge test of SAGCM InGaAs/InP APDs
Author :
Hwang, Nam ; Kang, Seung-Goo ; Lee, Hee-Tae ; Song, Min-Kyu ; Kim, Dong-Goo ; Park, Hyung-Moo
Author_Institution :
Compound Semicond. Dept., ETRI, Taejon, South Korea
Abstract :
The purpose of this paper is to propose a high reliability purge condition for separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP avalanche photodiodes (APDs) for fiber optical transmission systems. We have found that infant failures of the InGaAs/InP APDs can be purged out by applying 90% of the reverse breakdown voltage at an ambient temperature of 100/spl deg/C for a minimum of 6 hours. The physical mechanism of the infant failures is a positive interfacial trapped charge causing decrease in breakdown voltage and an increase in dark current.
Keywords :
III-V semiconductors; avalanche photodiodes; failure analysis; gallium arsenide; indium compounds; interface states; optical fibre communication; semiconductor device reliability; semiconductor device testing; telecommunication equipment testing; 100 C; 6 hour; InGaAs-InP; SAGCM InGaAs/InP APDs; ambient temperature; avalanche photodiodes; dark current; fiber optical transmission systems; high reliability purge condition; infant failures; physical mechanism; positive interfacial trapped charge; reliability purge test; reverse breakdown voltage; separate absorption grading charge multiplication; Absorption; Dark current; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Optical films; Optical receivers; Optical sensors; Temperature; Testing;
Conference_Titel :
Reliability Physics Symposium, 1995. 33rd Annual Proceedings., IEEE International
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-2031-X
DOI :
10.1109/RELPHY.1995.513673
